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| SUD50P04-09L New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) - 40 FEATURES ID (A)d - 50 - 50 rDS(on) (W) 0.0094 @ VGS = - 10 V 0.0145 @ VGS = - 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive 12-V Boardnet S TO-252 G Drain Connected to Tab G D S Top View Ordering Information: SUD50P04-09L D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit - 40 "20 - 50d - 50d - 100 - 50 125 136c 3b, c - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambientb J ti t A bi t Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Steady State RthJA RthJC Symbol Typical 15 40 0.82 Maximum 18 50 1.1 Unit _C/W C/W Document Number: 72243 S-31261--Rev. A, 16-Jun-03 www.vishay.com 1 SUD50P04-09L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 32 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = - 32 V, VGS = 0 V, TJ = 125_C VDS = - 32 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 24 A Drain-Source On-State Drain Source On State Resistancea VGS = - 10 V, ID = - 50 A, TJ = 125_C rDS( ) DS(on) VGS = - 10 V, ID = - 50 A, TJ = 175_C VGS = - 4.5 V, ID = - 18 A Forward Transconductancea gfs VDS = - 5 V, ID = - 24 A 0.0115 73 - 50 0.0075 0.0094 0.014 0.017 0.0145 S W - 40 -1 -3 "100 -1 - 50 - 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = - 20 V, RL = 0.4 W ID ] - 50 A, VGEN = - 10 V, RG = 6 W VDS = - 20 V, VGS = - 10 V, ID = - 50 A , , VGS = 0 V, VDS = - 25 V, f = 1 MHz 4800 700 550 102 18.5 27 10 60 145 140 15 90 220 220 ns 150 nC pF Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = - 50 A, VGS = 0 V IF = - 50 A, di/dt = 100 A/ms - 1.0 55 - 50 A - 100 - 1.5 85 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72243 S-31261--Rev. A, 16-Jun-03 SUD50P04-09L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 5 V 4V 80 I D - Drain Current (A) I D - Drain Current (A) 80 100 Vishay Siliconix Transfer Characteristics 60 60 40 40 TC = 125_C 20 25_C - 55_C 20 3V 2V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = - 55_C 100 g fs - Transconductance (S) 25_C 125_C 80 r DS(on)- On-Resistance ( W ) 0.016 0.020 On-Resistance vs. Drain Current 0.012 VGS = 4.5 V 60 0.008 VGS = 10 V 40 20 0.004 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 8000 7000 V GS - Gate-to-Source Voltage (V) 8 6000 5000 4000 3000 2000 1000 Crss 0 0 5 10 15 20 25 30 35 40 0 0 20 40 Coss Ciss 10 Gate Charge VDS = 20 V ID = 50 A C - Capacitance (pF) 6 4 2 60 80 100 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72243 S-31261--Rev. A, 16-Jun-03 www.vishay.com 3 SUD50P04-09L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.8 VGS = 10 V ID = 50 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.6 r DS(on) - On-Resistance ( W ) (Normalized) 1.4 TJ = 150_C 1.2 10 TJ = 25_C 1.0 0.8 1 - 25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 0.6 - 50 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 60 1000 Safe Operating Area 50 rDS(on) Limited I D - Drain Current (A) 40 I D - Drain Current (A) 100 IDM Limited P(t) = 0.0001 30 20 ID(on) Limited 10 TC = 25_C Single Pulse BVDSS Limited 1 10 P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 100 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 www.vishay.com 4 Document Number: 72243 S-31261--Rev. A, 16-Jun-03 |
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